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interferoMETER IMS5420-TH

Inline thickness measurement in real time

Multilayer measurement of up to 5 layers

Nanometer precision in silicon wafer thickness measurement

White light interferometer for high precision wafer measurement

The IMS5420 is a high-performance white light interferometer for non-contact thickness measurement of monocrystalline silicon wafers. The controller has a broadband superluminescent diode (SLED) with a wavelength range of 1,100 nm. This enables the thickness measurement of undoped, doped and highly doped SI wafers with only one measuring system and signal stability of less than 1 nm. Depending on the field of application, sensors with large offset distance and with air purge system are available.

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Characteristics

Nanometer-accurate thickness measurement of undoped, doped and highly doped wafers
Multi-peak: acquisition of up to 5 layers with an SI thickness of 0.05 up to 1.05 mm
High resolution in z-axis of 1 nm
Measuring rate up to 6 kHz for fast measurements
Ethernet / EtherCAT / RS422 / PROFINET / EtherNet/IP
Easy parameterization via web interface

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Efrain Arredondo

Micro-Epsilon America | East Regional Office

CT, DC, DE, MA, MD, ME, NH, NJ, NY, PA, RI, VT

919 787 9707

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Steve Sochowski

Micro-Epsilon America | Mid West Regional Office

IL: 600-619, IN, KY, MI, OH, PA: 150-167, WI: 530-539, 541-545, 549, WV

630 243-0980

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Jerry Carayanis

Micro-Epsilon America | Western Regional Office

AK, CA, HI, NV, OR, WA

310 729 0954

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Friedrich "Fritz" Gebessler

Micro-Epsilon America | Central Regional Office

AZ, CO, IA, ID, IL: 620-629, KS, LA, MN, MO, MT, ND, NE, NM, OK, SD, TX, UT, WI: 540, 546-548, WY

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Tim Prentice

Micro-Epsilon America | South East Regional Office

AL, AR, FL, GA, MS, NC, SC, TN, VA

919 649 9805

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Holger Kopp

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CA: 932, 934, 936 - 961 (Northern Cal)

984 888 6555

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Tim Fauser

Instrumentation Resources

952-797-0220

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T&M Instruments

LA, OK, TX

512-772-1553

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Josh Gordon

Process Technology, Inc.

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Mike Hallenbeck

Process Technology, Inc.

ID, MT, UT, WY

801 264 1114

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Al Reithmeier, Kevin Corcoran

Analectro

DC, DE, MD, NJ PA: 168 - 196

856 795 6676

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Kurt Jacoby, Chris Jacoby

Dempsco

KY, IN, WV, OH: 430-433, 437-459 PA: 150-167

937 436 1000

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Philip Theaker, John Callaghan

Preferred Technical Resources

MI, OH: 434 - 436

248 668 9051

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John Saporito

MCT/RAM - Corporate Office

NY 120 - 123, 128 - 149

585 461 2110

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John Gustafson

MCT/RAM - Lower New York and New York City

NY 100 - 119, 124 - 127

631-286-7374

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Jon Korus

Instrumentation Resources

WI: 530 - 539, 541 - 545, 549

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Tony Marquette

Instrumentation Resources

IA, KS, MN, MO, ND, NE, SD, WI: 540, 546 - 548

952 797 0220

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Ed Querfeld

Equipoise Technologies, LLC

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503 708 9969

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Tim DiPeri

CASECO

AL, AR, MS, TN FL: 324 - 325

615 591-7399

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Precise wafer thickness measurement

Due to the optical transparency of silicon wafers in the wavelength range of 1,100 nm, the IMS5420 interferometers can precisely detect the thickness. In this wavelength range, both undoped silicon and doped wafers provide sufficient transparency. Therefore, wafer thicknesses up to 1.05 mm can be detected. The measurable thickness of the air gap is even up to 4 mm.

The IMS5420 interferometer enables the thickness measurement of undoped, doped and highly doped silicon wafers and thus offers a wide range of applications. This wafer thickness measuring system is ideal for the measurement of monocrystalline silicon wafers with a geometric thickness of 500 to 1050 µm and a doping of up to 6 m Ω cm. Despite decreasing transparency with increasing doping, thicknesses up to 0.8 mm can still be measured even of highly doped wafers.

Precise thickness measurement during lapping

In wafer fabrication, a crystalline silicon ingot is sawn into thin slices of about 1 mm. The wafers are then ground and lapped to obtain the desired thickness and surface finish. For stable, reproducible process control, interferoMETER systems for inline thickness measurement are integrated directly into lapping and grinding machines. The detected thickness values are used for machine control as well as for quality control of each single wafer.

Compact IMP-NIR-TH24 sensor

With its slim diameter of just 10 mm and its large working distance of 24 mm, the IMP NIR TH24 is ideal for retrofitting in existing systems. The adjustable mounting adapter (JMA) significantly simplifies the integration, as even minor mounting deviations or inclined positions can be reliably compensated for. Both the sensor and the fiber optic cable are available in UHV design on request.

interferoMETER IMP NIR TH24 for retrofitting

interferoMETER IMP NIR TH3/90/IP68 with 90° beam path

NEW: Robust IMP-NIR-TH3/90/IP68 sensor

The IMP-NIR-TH3/90/IP68 expands the sensor portfolio with a high-performance sensor for particularly demanding installation situations and harsh environmental conditions. This sensor impresses with a 90° beam path and a small working distance of just 3 mm – ideal for very tight installation situations. Due to its robust housing (IP68), the sensor is also suitable for particularly demanding applications, such as slurry grinding. The integrated air purge device keeps the beam path continuously free of contamination and thus enables permanent measurement accuracy – even in heavily contaminated environments.

Numerous models for demanding measurement tasks

Model	Working distance / measuring range	Linearity	Number of measurable layers	Fields of application
IMS5420-TH	Working distance IMP-NIR-TH24 approx. 24 mm (21 ... 27 mm) \| IMP-NIR-TH3/90/IP68 approx. 3 mm (1 ... 6 mm) / 0.05 ... 1.05 mm (for silicon / n=3.82), 0.2 ... 4 mm (for air, n=1)	< ±100 nm	1 layer	Inline thickness measurement, e.g. after grinding or polishing.
IMS5420MP		< ±100 nm for one layer < ±200 nm for additional layers	up to 5 layers	Inline thickness measurement, e.g. for quality control of the layer thickness after coating.
IMS5420/IP67	Working distance IMP-NIR-TH24 approx. 24 mm (21 ... 27mm) / 0.05 ... 1.05 mm (for silicon / n=3.82), 0.2 ... 4 mm (for air, n=1)	< ±100 nm	1 layer	Industrial inline thickness measurement during lapping and grinding.
IMS5420/IP67MP-TH		< ±100 nm for one layer < ±200 nm for additional layers	up to 5 layers	Industrial inline thickness and multilayer measurement during lapping and grinding.

Modern interfaces for integration into machines and systems

The controller offers integrated interfaces such as Ethernet, EtherCAT and RS422 as well as additional encoder connections, analog outputs, synchronization inputs and digital I/Os. When you use Micro-Epsilon's interface modules, PROFINET and EthernetIP are available. This allows the interferometer to be integrated into all control systems and production programs.